Spintronics and Non-Volatile Memory


Spintronics focus on the study of electron spin to achieve efficient information storage and computation. Compared with the traditional charge-based devices, spintronic devices are nonvolatile and consume less power. The recent development of spintronics has greatly boosted the study of post-Moore devices. For example, the magnetic random access memory (MRAM) is a new type of nonvolatile memory. Its high read-write speed and large storage capacity make it promising in replacing DRAM and SRAM, thus achieving a universal storage architecture. In addition, spintronic devices can be used to mimic the biological neurons, which could pave the way towards the next generation bio-inspired computing. PMICC focus on the key problems in spintronics. Our research topics ranging from new materials (e.g., strong spin-orbit coupling materials, ferrimagnets, antiferromagnets), novel devices (e.g., MRAM bit cell, spintronic oscillator), and critical circuits. Through these studies, we wish to advance the development of next generation storage and computing technologies in China.

Representative Work

2016 Proc. IEEE (Review Article) - Electric-Field Control of Spin-Orbit Interaction for Low-Power Spintronics

2020 Nano Lett. - Tailoring the hybrid anomalous Hall response in engineered magnetic Topological Insulator heterostructures

2020 IEEE TMAG - Imaging magnetization switching induced by spin-orbit torque in perpendicularly magnetized Ta/CoFeB structure

2019 Science - Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

2019 Nature Elec. - Ultrafast and energy-efficient spin–orbit torque switching in compensated ferrimagnets

2018 Nature Comm. - Anomalous Hall magnetoresistance in a ferromagnet

2017 Nature Mater. - Tailoring exchange couplings in magnetic topological insulator/antiferromagnet heterostructures

2016 Nature Nano. - Electric-field control of spin-orbit torque in a magnetically doped topological insulator